| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 150V |
| Continuous Drain Current (Ids) | 23A |
The IRFB23N15DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
12 Pages / 0.27 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.09Ω, Id=23A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.09Ω; ID 23A; TO-220AB; PD 136W; VGS +/-30V
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