| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 18.0 A |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 17.0 A |
| Rise Time | 60.0 ns |
The IRFB18N50KPBF is a 500V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
● Low RDS (ON)
VISHAY
9 Pages / 0.21 MByte
VISHAY
TO-220-3 N-CH 500V 17A 290mΩ
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