| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 11.0 A |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 35.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRFB11N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
VISHAY
8 Pages / 0.13 MByte
International Rectifier
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52Ω, ID = 11A
IRF
Power MOSFET(Vdss=500V, Rds(on)max=0.52Ω, Id=11A)
VISHAY
TO-220-3 N-CH 500V 11A 520mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.52Ω; ID 11A; TO-220AB; PD 170W; VGS +/-30V
Vishay Siliconix
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
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Vishay Siliconix
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International Rectifier
MOSFET N-CH 500V 11A TO-220AB
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