| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 12A |
The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rated
● 175°C Operating temperature
Infineon
9 Pages / 0.49 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
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