| TYPE | DESCRIPTION |
|---|
| Case/Package | SOIC |
| Polarity | N-Channel, P-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 3.5A/2.3A |
The IRF9952PBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infra-red or wave soldering techniques.
● Generation V technology
● Ultra low ON-resistance
● Surface-mount device
● Very low gate charge and switching losses
● Fully avalanche rated
Infineon
10 Pages / 0.21 MByte
Infineon
12 Pages / 0.47 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
12 Pages / 0.56 MByte
International Rectifier
Trans MOSFET N/P-CH 30V 3.5A/2.3A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N/P-CH 30V 3.5A/2.3A 8Pin SOIC Tube
International Rectifier
Transistor N/P-MOSFET 30V 3,5/-2,3A 2W SO8
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