TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -200 V |
Current Rating | -3.50 A |
Case/Package | TO-220-3 |
Polarity | P-Channel |
Power Dissipation | 40.0 W |
Drain to Source Voltage (Vds) | -200 V |
Breakdown Voltage (Drain to Source) | -200 V |
Continuous Drain Current (Ids) | -3.50 A |
Rise Time | 25.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The IRF9620PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
● Dynamic dV/dt rating
● Ease of paralleling
● Simple drive requirements
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