| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -200 V |
| Current Rating | -1.80 A |
| Case/Package | TO-220AB |
| Polarity | P-Channel |
| Power Dissipation | 20.0 W |
| Drain to Source Voltage (Vds) | -200 V |
| Breakdown Voltage (Drain to Source) | -200 V |
| Continuous Drain Current (Ids) | -1.80 A |
| Rise Time | 15.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Dynamic dV/dt rating
● Fast switching
● 150°C Operating temperature
● Easy to parallel
● Simple drive requirement
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