| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 23A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Cut Tape (CT) |
The IRF9540NSTRLPBF is a HEXFET® single P-channel Power MOSFET offers fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
● Advanced process technology
● Ultra-low ON-resistance
● Fast switching
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
11 Pages / 0.31 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
Vishay Semiconductor
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
International Rectifier
100V 19A Single P Channel HEXFET Power MOSFET SO
Vishay Siliconix
MOSFET P-CH 100V 19A TO-220AB
VISHAY
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
Intersil
19A, 100V, 0.2Ω, P-Channel Power MOSFETs
Samsung
100V, P-channel power MOSFET
International Rectifier
Trans MOSFET P-CH 100V 23A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.2Ω; ID -19A; TO-220AB; PD 150W; VGS +/-20V
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