| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -12.0 A |
| Case/Package | TO-220AB |
| Drain to Source Resistance (on) (Rds) | 300 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 88.0 W |
| Drain to Source Voltage (Vds) | -100 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | -12.0 A |
| Rise Time | 52.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRF9530PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 175°C Operating temperature
● Easy to parallel
● Simple drive requirement
● Fast switching
Vishay Semiconductor
Trans MOSFET P-CH 100V 12A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 100V 12A TO-220AB
Major Brands
Mosfet Irf9530 To-220Abp-Channel -100V
International Rectifier
100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.3Ω; ID -12A; TO-220AB; PD 88W; VGS +/-20V
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.2Ω; ID -14A; TO-220AB; PD 79W; VGS +/-20V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
