| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 14A |
The IRF9530NSPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
● Advanced process technology
● Fast switching
● Fully avalanche rated
● 175°C Operating temperature
Infineon
11 Pages / 0.74 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
Vishay Semiconductor
Trans MOSFET P-CH 100V 12A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 100V 12A TO-220AB
Major Brands
Mosfet Irf9530 To-220Abp-Channel -100V
International Rectifier
100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.3Ω; ID -12A; TO-220AB; PD 88W; VGS +/-20V
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.2Ω; ID -14A; TO-220AB; PD 79W; VGS +/-20V
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