Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●Advanced Process Technology
●Surface Mount (IRF9520S)
●Low-profile through-hole (IRF9520L)
●175°C Operating Temperature
●Fast Switching
●P-Channel
●Fully Avalanche Rated
International Rectifier
0.15 MByte
Intersil
Trans MOSFET P-CH 100V 6A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 100V 6A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 100...
International Rectifier
Trans MOSFET P-CH Si 100V 6A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
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Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
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Trans MOSFET P-CH Si 100V 6A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3P-CH 100V 6.8A 600mΩ
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.6Ω; ID -6.8A; TO-220AB; PD 60W; VGS +/-20V
International Rectifier
Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
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