| TYPE | DESCRIPTION |
|---|
| Drain to Source Resistance (on) (Rds) | 500 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 125 W |
| Part Family | IRF9240 |
| Drain to Source Voltage (Vds) | -200 V |
| Breakdown Voltage (Drain to Source) | -200 V |
| Continuous Drain Current (Ids) | -11.0 A |
The IRF9240 is a -200V single P-channel Advanced HEXFET® MOSFET features efficient geometry and unique processing of this latest state-of-the-art design achieves, very low on-state resistance combined with high transconductance, superior reverse energy and diode recovery dv/dt capability. The HEXFET transistor also features all of the well established advantages of MOSFET such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
International Rectifier
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