TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 30V |
Continuous Drain Current (Ids) | 14A |
The IRF8714PBF is a 30V single N-channel HEXFET® Power MOSFET uses silicon technology. The power MOSFET has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
● Very low gate charge
● Very low RDS (ON) at 4.5V VGS
● Ultra-low gate impedance
● Fully characterized avalanche voltage and current
Infineon
9 Pages / 0.24 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
Trans MOSFET N-CH 30V 14A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 14A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH 30V 14A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 14A 8Pin SOIC
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