| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 8.00 A |
| Case/Package | TO-220AB |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 8.00 A |
| Rise Time | 23.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRF840APBF is a N-channel Power MOSFET with low gate charge and improved gate, avalanche and dynamic dv/dt ruggedness.
● Fully characterized capacitance and avalanche voltage and current
● Effective Coss specified
● ±30V Gate-source voltage
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