| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | Dual N-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 9.7A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF8313TRPBF is a dual N-channel Power MOSFET incorporates the latest HEXFET power silicon technology into the industry standard package. It has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors for notebook and Netcom applications.
● Low gate charge and low RDS (ON)
● Fully characterized avalanche voltage and current
● Halogen-free
Infineon
10 Pages / 0.24 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
8 Pages / 0.11 MByte
International Rectifier
Trans MOSFET N-CH 30V 9.7A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH Si 30V 9.7A 8Pin SOIC T/R
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