IRF830 Datasheet PDF - ON Semiconductor

TMOS POWER FET 4.5 AMPERES 500 VOLTS RDS(on)= 1.5 Ω

●This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

●•Silicon Gate for Fast Switching Speeds

●•Low RDS(on)to Minimize On–Losses, Specified at Elevated Temperature

●•Rugged — SOA is Power Dissipation Limited

●•Source–to–Drain Diode Characterized for Use with Inductive Loads