| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 2.50 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRF820APBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge.
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and Avalanche voltage and current
● Effective COSS specified
VISHAY
9 Pages / 0.26 MByte
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