TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | REEL |
Polarity | N-Channel |
Power Dissipation | 97.0 mW |
Part Family | IRF7855 |
Drain to Source Voltage (Vds) | 60.0 V |
Continuous Drain Current (Ids) | 12.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
The IRF7855PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for primary side switch in bridge topology in isolated DC-to-DC converters, primary side switch in push-pull topology for 18 to 36Vin isolated DC-to-DC converters, secondary side synchronous rectification switch for 15Vout and 48V non-isolated synchronous buck DC-to-DC applications.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
8 Pages / 0.59 MByte
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27 Pages / 0.3 MByte
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2 Pages / 0.17 MByte
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4 Pages / 0.09 MByte
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
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Trans MOSFET N-CH 60V 12A 8Pin SOIC Tube
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Trans MOSFET N-CH 60V 12A 8Pin SOIC T/R
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Trans MOSFET N-CH 60V 12A 8Pin SOIC T/R
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