TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 30V |
Continuous Drain Current (Ids) | 21A |
The IRF7831PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency point-of-load synchronous buck converter for applications in networking system.
● Ultra-low gate impedance
● Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
● 100% Rg tested
Infineon
10 Pages / 0.25 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
12 Pages / 0.56 MByte
International Rectifier
Dual N-Channel MOSFET, Vdss = 30V, Rds = 3.6mΩ@Vgs = 10V, Id = 21A, SOIC8핀 패키지
International Rectifier
Trans MOSFET N-CH 30V 21A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 21A 8Pin SOIC Tube
International Rectifier
MOSFET N-CH 30V 21A 8-SOIC
Infineon
Trans MOSFET N-CH 30V 21A 8Pin SOIC T/R
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