IRF7809AVPBF Datasheet PDF - Infineon

The IRF7809AVPBF is a HEXFET® single N-channel Power MOSFET designed for vapour phase, infrared, convection or wave soldering techniques. This new device employs advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-to-DC converters that power the latest generation of microprocessors. The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS (ON), gate charge and CdV/dt-induced turn-ON immunity. It offers particularly low RDS (ON) and high CdV/dt immunity for synchronous FET applications. Power dissipation of greater than 2W is possible in a typical PCB mount application.

● Low conduction losses

● Low switching losses

● 100% Rg tested

● Low static drain-to-source ON-resistance

● Dynamic dV/dt rating

● Fast switching

● Fully avalanche rating