| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | µSOIC |
| Polarity | N-Channel, P-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 2.7A/2A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Cut Tape (CT) |
The IRF7509TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
● Generation V technology
● Ultra low ON-resistance
● Low profile
● Fast switching performance
Infineon
8 Pages / 0.23 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package
International Rectifier
Trans MOSFET N/P-CH 30V 2.7A/2A 8Pin Micro T/R
International Rectifier
Trans MOSFET N/P-CH 30V 2.7A/2A 8Pin Micro
Infineon
Trans MOSFET N/P-CH 30V 2.7A/2A 8Pin Micro T/R
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