TYPE | DESCRIPTION |
---|
Case/Package | REEL |
Polarity | N+P |
Drain to Source Voltage (Vds) | 20V |
Continuous Drain Current (Ids) | 2.4A/1.7A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
The IRF7507TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
● Generation V technology
● Ultra low ON-resistance
● Low profile
● Fast switching performance
Infineon
8 Pages / 0.2 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.08 MByte
International Rectifier
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package
International Rectifier
Trans MOSFET N/P-CH 20V 2.4A/1.7A 8Pin Micro T/R
International Rectifier
Trans MOSFET N/P-CH 20V 2.4A/1.7A 8Pin Micro
IFC
Dual N/P-Channel ±20V 135mΩ / 270mΩ 5.3/5.4NC SMT Hexfet Power Mosfet -MICRO-8
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