| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 7.3A |
| Rise Time | 13.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF7495PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters and high side load switch.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
● Fast switching
Infineon
8 Pages / 0.14 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET N-CH 100V 7.3A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 18Milliohms; ID 7.3A; SO-8; PD 2.5W; VGS +/-20
International Rectifier
Trans MOSFET N-CH 100V 7.3A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 100V 7.3A 8Pin SOIC T/R
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