| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 80V |
| Continuous Drain Current (Ids) | 9.3A |
| Rise Time | 7.50 ns |
The IRF7493PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters and high side load switch.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
● Fast switching
Infineon
9 Pages / 0.15 MByte
Infineon
5 Pages / 0.1 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
Trans MOSFET N-CH 80V 9.3A 8Pin SOIC
International Rectifier
Trans MOSFET N-CH 80V 9.3A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 80V 9.3A 8Pin SOIC Trans MOSFET N-CH 80V 9.3A 8Pin SOIC Trans MOSFET N-CH 80V 9.3A 8Pin SOIC
International Rectifier
MOSFET N-CH 80V 9.3A 8-SOIC
IFC
N-Channel 80V 15mΩ 35NC Surface Mount Hexfet Power Mosfet - SOIC-8
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