| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 150V |
| Continuous Drain Current (Ids) | 1.9A |
| Rise Time | 1.20 ns |
The IRF7465PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency DC-to-DC converters.
● Low gate-to-drain charge to reduce switching losses
● Fully characterized capacitance including effective COSS to simplify design
Infineon
8 Pages / 0.12 MByte
Infineon
12 Pages / 0.47 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
12 Pages / 0.56 MByte
IRF
Power MOSFET(Vdss=150V, Id=1.9A)
International Rectifier
Trans MOSFET N-CH 150V 1.9A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 150V 1.9A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH 150V 1.9A 8Pin SOIC T/R
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