| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 4.5A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF7452PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
8 Pages / 0.27 MByte
Infineon
1 Pages / 0.08 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
MOSFET N-CH 100V 4.5A 8-SOIC
IRF
Power MOSFET(Vdss=100V, Rds(on)max=0.06Ω, Id=4.5A)
International Rectifier
Trans MOSFET N-CH 100V 4.5A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.06Ω; ID 4.5A; SO-8; PD 2.5W; VGS +/-30V; -55
International Rectifier
Trans MOSFET N-CH 100V 4.5A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 100V 4.5A 8Pin SOIC
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