| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 10A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF7416PBF is a P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Dynamic dv/dt rating
● Fully avalanche rated
● Generation V technology
Infineon
9 Pages / 0.23 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC
IRF
Power MOSFET(Vdss=-30V, Rds(on)=0.02Ω)
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.02Ω; ID -10A; SO-8; PD 2.5W; VGS +/-20V; -55
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC T/R
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC T/R
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC T/R
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