| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 13.0 A |
| Case/Package | SOIC |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Part Family | IRF7413Z |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Continuous Drain Current (Ids) | 13.0 A |
| Rise Time | 6.30 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
●N-Channel Power MOSFET 13A to 19A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 8 Milliohms; ID 13A; SO-8; PD 2.5W; VGS +/-20V
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