| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 13A |
The IRF7413TRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the ruggedized device design, provides an extremely efficient and reliable operation for use in battery and load management application. The IRF7413PBF is a fifth generation single N-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
● Generation V technology
● Ultra-low ON-resistance
● Dynamic dV/dt rating
● Fast switching
● 100% Rg tested
● Low switching losses
● Low conduction losses
Infineon
9 Pages / 0.25 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.04 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET N-CH 30V 13A 8Pin SOIC
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Trans MOSFET N-CH 30V 13A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH Si 30V 13A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 8 Milliohms; ID 13A; SO-8; PD 2.5W; VGS +/-20V
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