TYPE | DESCRIPTION |
---|
Case/Package | REEL |
Polarity | N+P |
Drain to Source Voltage (Vds) | 55V |
Continuous Drain Current (Ids) | 4.7A/3.4A |
The IRF7343PBF is a 55V dual N-channel and P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Surface mount
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
10 Pages / 0.21 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
8 Pages / 0.11 MByte
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8Pin SOIC
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8Pin SOIC Tube
International Rectifier
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
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