| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 3.4A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Generation V technology
● Ultra low ON-resistance
● Surface-mount device
● Dynamic dV/dt rating
● Fast switching performance
Infineon
7 Pages / 0.15 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
8 Pages / 0.11 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -55V; RDS(ON) 0.105Ω; ID -3.4A; SO-8; PD 2W; VGS +/-20
International Rectifier
Trans MOSFET P-CH 55V 3.4A 8Pin SOIC Tube
International Rectifier
Trans MOSFET P-CH 55V 3.4A 8Pin SOIC
International Rectifier
Dual P-Channel 55V 2W 26NC Hexfet Power Mosfet Surface Mount - SOIC-8
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