| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOIC |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 12V |
| Continuous Drain Current (Ids) | 9.2A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF7329PBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Trench technology
● Ultra low ON-resistance
● Low profile
Infineon
9 Pages / 0.16 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
International Rectifier
MOSFET 2P-CH 12V 9.2A 8-SOIC
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