| TYPE | DESCRIPTION |
|---|
| Case/Package | SOIC |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 8A |
The IRF7328TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications.
● Trench technology
● Ultra low ON-resistance
Infineon
8 Pages / 0.16 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.05 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET P-CH 30V 8A 8Pin SOIC
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -30V; RDS(ON) 17 Milliohms; ID -8A; SO-8; PD 2W; gFS 12S
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -30V; RDS(ON) 17 Milliohms; ID -8A; SO-8; PD 2W; gFS 12S
International Rectifier
MOSFET 2P-CH 30V 8A 8-SOIC
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