| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | Dual P-Channel |
| Drain to Source Voltage (Vds) | 20V |
| Continuous Drain Current (Ids) | 9A |
The IRF7324PBF is a -20V dual P-channel new trench HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
● Trench technology
● Ultra low on-resistance
● Dual P-channel MOSFET
● Low profile (<1.1mm)
● 2.5V Rated
Infineon
8 Pages / 0.16 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
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