TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 6.50 A |
Case/Package | SOIC |
Drain to Source Resistance (on) (Rds) | 29.0 mΩ |
Polarity | Dual N-Channel |
Power Dissipation | 2.00 W |
Part Family | IRF7313 |
Drain to Source Voltage (Vds) | 30.0 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Continuous Drain Current (Ids) | 6.50 A |
Rise Time | 8.90 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
●HEXFET® N-Channel Power MOSFET up to 50A, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
7 Pages / 0.2 MByte
International Rectifier
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