| TYPE | DESCRIPTION |
|---|
| Case/Package | SOIC |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 6.5A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF7313TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Generation V technology
● Ultra low ON-resistance
● Surface-mount device
● Fully avalanche rated
Infineon
7 Pages / 0.2 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.04 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.029Ω; ID 6.5A; SO-8; PD 2W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 30V 6.5A 8Pin SOIC Tube
IFA
Dual N-Channel 30V 0.029Ω 22NC SMT Hexfet Power Mosfet - SOIC-8
International Rectifier
Trans MOSFET N-CH 30V 6.5A 8Pin SOIC T/R
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