TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 400 V |
Current Rating | 5.50 A |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 1.00 Ω |
Polarity | N-Channel |
Power Dissipation | 74.0 W |
Drain to Source Voltage (Vds) | 400 V |
Breakdown Voltage (Drain to Source) | 400 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | 5.50 A |
Rise Time | 15.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The IRF730PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 150°C Operating temperature
● Easy to parallel
● Simple drive requirement
VISHAY
8 Pages / 0.11 MByte
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Major Brands
Transistor IRF730MOSFET N Channel 400V
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 1Ω; ID 5.5A; TO-220AB; PD 74W; VGS +/-30V; -55
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