| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 400 V |
| Current Rating | 5.50 A |
| Case/Package | TO-220AB |
| Polarity | N-Channel |
| Power Dissipation | 74.0 W |
| Drain to Source Voltage (Vds) | 400 V |
| Breakdown Voltage (Drain to Source) | 400 V |
| Continuous Drain Current (Ids) | 5.50 A |
| Rise Time | 22.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRF730APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
● Effective COSS specified
● Simple drive requirements
Vishay Semiconductor
9 Pages / 0.27 MByte
Vishay Semiconductor
9 Pages / 0.27 MByte
Vishay Semiconductor
3 Pages / 0.14 MByte
ST Microelectronics
Trans MOSFET N-CH 400V 5.5A 3Pin(3+Tab) TO-220 Tube
Vishay Semiconductor
Trans MOSFET N-CH 400V 5.5A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 400V 5.5A 3Pin TO-220AB
Vishay Siliconix
MOSFET N-CH 400V 5.5A TO-220AB
Major Brands
Transistor IRF730MOSFET N Channel 400V
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 1Ω; ID 5.5A; TO-220AB; PD 74W; VGS +/-30V; -55
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