| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel, P-Channel |
| Drain to Source Voltage (Vds) | 20V |
| Continuous Drain Current (Ids) | 5.7A/4.7A |
The IRF7307PBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Generation V technology
● Ultra low ON-resistance
● Surface-mount device
● Dynamic dV/dt rating
● Fast switching performance
Infineon
10 Pages / 0.27 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
8 Pages / 0.11 MByte
International Rectifier
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N/P-CH 20V 5.7A/4.7A 8Pin SOIC Tube
International Rectifier
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
20V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
International Rectifier
MOSFET N/P-CH DUAL 20V 8SOIC
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
