| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 4.6A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF7205PBF is a HEXFET® fourth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
● Advanced process technology
● Dynamic dV/dt rating
● Fast switching
● Low static drain-to-source ON-resistance
● Fully avalanche rating
Infineon
9 Pages / 0.27 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
8 Pages / 0.11 MByte
International Rectifier
Trans MOSFET P-CH 30V 4.6A 8Pin SOIC
International Rectifier
Trans MOSFET P-CH 30V 4.6A 8Pin SOIC Tube
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ω; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
Trans MOSFET P-CH 30V 4.6A 8Pin SOIC T/R
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