| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Current Rating | 3.50 A |
| Case/Package | SOIC |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 2.00 W |
| Part Family | IRF7105 |
| Drain to Source Voltage (Vds) | 25.0 V |
| Breakdown Voltage (Drain to Source) | 25.0 V |
| Continuous Drain Current (Ids) | 3.50 A |
| Thermal Resistance | 62.5 K/W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
●Dual N/P-Channel Power MOSFET, Infineon
●Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
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