| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 30.0 A |
| Drain to Source Resistance (on) (Rds) | 1.65 Ω |
| Polarity | N-Channel |
| Power Dissipation | 89.0 W |
| Part Family | IRF6619 |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 71.0 ns |
Description
●The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
●• Low Profile (<0.7 mm)
●• Dual Sided Cooling Compatible
●• Ultra Low Package Inductance
●• Optimized for High Frequency Switching above 1MHz
●• Ideal for CPU Core DC-DC Converters
●• Optimized for Sync. FET socket of Sync. Buck Converter
●• Low Conduction Losses
●• Compatible with existing Surface Mount Techniques
International Rectifier
0.26 MByte
International Rectifier
10 Pages / 0.28 MByte
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