| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 200V |
| Continuous Drain Current (Ids) | 9.3A |
| Rise Time | 14.0 ns |
The IRF630NSPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
● Ease of paralleling
● Simple drive requirements
Infineon
11 Pages / 0.32 MByte
Infineon
12 Pages / 0.47 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
12 Pages / 0.56 MByte
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