TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 200V |
Continuous Drain Current (Ids) | 9.3A |
The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Fully avalanche rated
● Dynamic dV/dt rating
● Easy to parallel
● Simple drive requirement
Infineon
11 Pages / 0.32 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.14 MByte
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