| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 Full Pack |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 200V |
| Continuous Drain Current (Ids) | 9A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
Description
●This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
●General features
●■ Extremely high dv/dt capability
●■ Very low intrinsic capacitances
●■ Gate charge minimized
●Applications
●■ Switching application
ST Microelectronics
14 Pages / 0.32 MByte
ST Microelectronics
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
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