| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 150V |
| Continuous Drain Current (Ids) | 13A |
The IRF6215PBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
8 Pages / 0.17 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 0.29Ω; ID -13A; TO-220AB; PD 110W; VGS +/-20
International Rectifier
Trans MOSFET P-CH 150V 13A 3Pin(2+Tab) D2PAK Tube
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