| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 250 V |
| Current Rating | 5.20 A |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 50.0 W |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 5.20 A |
| Rise Time | 22.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRF620PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Ease of paralleling
● Simple drive requirements
VISHAY
9 Pages / 0.26 MByte
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