TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 200V |
Continuous Drain Current (Ids) | 0.6A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
The IRF5801TRPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters, DC switches and load switch.
● Fully characterized avalanche voltage and current
● Fully characterized capacitance including effective COSS to simplify design
● Halogen-free
Infineon
8 Pages / 0.14 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 1.89 MByte
International Rectifier
Trans MOSFET N-CH 200V 0.6A 6Pin TSOP T/R
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