TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 28.0 A |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 77.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 150 W |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | 28.0 A |
Rise Time | 44.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The IRF540PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 175°C Operating temperature
● Easy to parallel
● Simple drive requirement
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