TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 14.0 A |
Case/Package | TO-220AB |
Drain to Source Resistance (on) (Rds) | 160 mΩ |
Polarity | N-Channel |
Power Dissipation | 88.0 W |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | 14.0 A |
Rise Time | 34.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The IRF530PBF is an N-channel Power MOSFET provides the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
VISHAY
9 Pages / 0.26 MByte
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